Brandt Group

Dopants and defects in semiconductors for quantum applications, EPR, ESR


The Brandt Group

The Brandt group studies the fundamental properties of paramagnetic states in semiconductors for quantum applications. These states include dopants such as phosphorus in silicon, where both the electronic spin as well as the spin of the nucleus can be used as a quantum resource. In isotopically pure 28Si, the latter system has a coherence time of tens of minutes, rendering 28Si:P a unique and highly useful quantum material. The group investigates the interactions between these spins and with their environment and develops methods to tune the spin properties e.g. via strain. For these investigations, the group in particular uses advanced pulsed electron spin resonance techniques.

 

Approaches to increase the sensitivity of magnetic resonance experiments are a particular focus of the research activity. Spin selection rules govern charge transport processes and allow the readout of quantum states. The Brandt group is spearheading these electrically detected magnetic resonance (EDMR) techniques and uses them to prepare spins at dopants or defects in silicon and other semiconductors and to understand spin-to-charge and spin-to-photon conversion. Both spin-dependent recombination as well as spin-dependent photoexcitation are employed for this. Of particular current interest is the electrical readout of NV- centers in diamond, which the group has recently demonstrated to be highly efficient.


Prof. Martin Brandt

Address:

Walter Schottky Institut and Physik-Department

Technische Universität München

Am Coulombwall 4

85748 Garching

Germany

 

E-Mail:

 

Phone:

+49 89 289 12758

 

 

 

Group webpage