Our research activities are focused on innovative semiconductor nano and quantum materials (III-V quantum nanowires, quantum dots and novel 2D heterostructures) and their use within diverse research areas spanning the fields of nano and quantum electronics, nano-optoelectronics and quantum photonics, as well as information technology and sensing. Along these avenues we pursue all stages from synthesis of nano and quantum materials to simulation and characterization of electronic, optical, structural, and charge carrier properties, as well as to device fabrication and probing device functionalities in regimes that are ruled by mesoscopic and quantum effects.
Below are examples of topics related to the exploration of these quantum nanomaterials.
Novel quantum-nanowire (NW) cavities on SOI-based platform are not only promising systems as integrated nanolaser sources for future on-chip optical interconnects, but may also enable directly integrated single and entangled states of light that can be efficiently coupled and computed on demand in underlying quantum circuits. One central theme of our work is to synthesize and explore the properties of quantum heterostructures (wells and dots) in NW cavities and further integrate these deterministically on 1D-waveguides (WG).
Our vision towards quantum optical circuits is to thereby exploit chiral optical effects in 1D-WG geometries, which will enable coupling of circularly polarized exciton spin states from NW-quantum dot (QD) emitters to chiral points for bi- and uni-directional propagation of exciton spin-states. Such demonstration to map polarization entanglement into path entanglement may enable large arrays of deterministic NW-QD/WG systems and to realize cascaded quantum states much needed for quantum information processing.
B. Loitsch, D. Rudolph, S. Morkötter, M. Döblinger, G. Grimaldi, L. Hanschke, S. Matich, E. Parzinger, U. Wurstbauer, G. Abstreiter, J. J. Finley, and G. Koblmüller: “Tunable quantum confinement in ultrathin, optically active semiconductor nanowires via reverse reaction growth”, Advanced Materials 27, 2195 (2015).
B. Loitsch, M. Müller, J. Winnerl, P. Veit, D. Rudolph, G. Abstreiter, J. J. Finley, F. Bertram, J. Christen, and G. Koblmüller: “Microscopic nature of crystal phase quantum dots in ultrathin GaAs nanowires by nanoscale luminescence characterization”, New Journal of Physics 18, 063009 (2016).
T. Stettner, A. Thurn, M. Döblinger, M. O. Hill, J. Bissinger, S. Matich, T. Kostenbader, D. Ruhstorfer, H. Riedl, M. Kaniber, L. J. Lauhon, J. J. Finley, and G. Koblmüller: “Tuning lasing emission towards telecommunication wavelengths in GaAs-(In,Al)GaAs core-multishell nanowires”, Nano Letters 18, 6292 (2018).
1D-like quantum NWs and their heterostructures play a substantial role in advanced quantum electronics and quantum information technologies. Ongoing research in these quantum electronic systems aims at investigations of charge carrier dynamics and interaction phenomena, and to investigate the highly relevant, hitherto unexplored non-equilibrium transport in 1D-nanostructures and their devices. Hereby, we study ultra-pure III-V-based NWs with intrinsically very high charge carrier mobility as well as systems with large spin-orbit interaction.
Particularly, we aim at control of the relevant transport regimes (ballistic vs. diffusive) – a capability that allows us to capture several important investigations of many-body correlations, spin-orbit interaction effects, as well as inelastic scattering and electron-phonon interaction effects.
Moving further in the direction of hybrid superconducting-semiconductor topological systems for quantum information processing, we explore proximity-induced local barriers defined between superconducting contacts and NWs to provide a platform for Majorana fermion bound states. This opens unique possibilities in studying unusual non-equilibrium quasiparticle distributions.
S. Morkötter, N. Jeon, D. Rudolph, S. Matich, M. Döblinger, D. Spirkoska, E. Hoffman, J. J. Finley, L. J. Lauhon, G. Abstreiter, and G. Koblmüller: “Demonstration of confined electron gas and steep-slope behavior in delta-doped GaAs-AlGaAs core-shell nanowire transistors“, Nano Letters 15, 3295 (2015).
D. Irber, J. Seidl, D. J. Carrad, J. Becker, N. Jeon, B. Loitsch, J. Winnerl, S. Matich, M. Döblinger, Y. Tang, S. Morkötter, G. Abstreiter, J. J. Finley, M. Grayson, L. J. Lauhon, and G. Koblmüller: “Quantum transport and sub-band structure of modulation-doped GaAs/AlAs core-superlattice nanowires“, Nano Letters 17, 4886 (2017).
A. V. Bubis, A. O. Denisov, S. U. Piatrusha, I. E. Batov, V. S. Khrapai J. Becker, J. Treu, D. Ruhstorfer, and G. Koblmüller: “Proximity effect and interface transparency in Al/InAs-nanowire/Al-diffusive junctions”, Semiconductor Science and Technology 32, 094007 (2017).
Walter Schottky Institut & Physics Department
Technical University of Munich
Am Coulombwall 4
Phone: +49(0) 89 / 289 - 12779
Fax: +49(0) 89 / 289 – 12704